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Datasheet SVD301 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 SVD301   X Band VCO / PLO

Ordering number : EN5500A Hyperabrupt Junction Type GaAs Varactor Diode SVD301 X Band VCO, PLO Features • High Q. • High capacitance ratio. Package Dimensions unit: mm 1274 [SVD301] 1 : Cathode 2 : Anode Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Ave
Sanyo Semicon Device
Sanyo Semicon Device
datasheet SVD301 pdf

SVD Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SVD7N60F

600V N-CHANNEL MOSFET

Datasheet.es SVD7N60T/SVD7N60F 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the
Silan Microelectronics
Silan Microelectronics
datasheet pdf - Silan Microelectronics
SVD4N65F

(SVD4N65T / SVD4N65F) 650V N-CHANNEL MOSFET

SVD4N65T/SVD4N65F 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guarding rin
Silan
Silan
datasheet pdf - Silan
SVD7N65AF

650V N-CHANNEL MOSFET

SVD7N65AT/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD7N65AT/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology. The improved planar stripe cell and the improved guar
SILAN
SILAN
datasheet pdf - SILAN


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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