Datasheet PJD50N10AL Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PJD50N10AL	100V N-Channel Enhancement Mode MOSFET PPJD50N10AL 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 42 A Features  RDS(ON) , VGS@10V, ID@20A<25mΩ  RDS(ON) , [email protected], ID@15A<28.5mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance  Lead free in compliance with E	Pan Jit International

PJD50N1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PJD50N10L	100V N-Channel Enhancement Mode MOSFET PPJU50N10L / PJD50N10L 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 50 A Features  RDS(ON), VGS@10V,ID@30A<22mΩ  High switching speed  Improved dv/dt capability  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU	Pan Jit International
PJD50N10AL	100V N-Channel Enhancement Mode MOSFET PPJD50N10AL 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 42 A Features  RDS(ON) , VGS@10V, ID@20A<25mΩ  RDS(ON) , [email protected], ID@15A<28.5mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance  Lead free	Pan Jit International

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Número de pieza	Descripción	Fabricantes	PDF
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