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Datasheet MPSA12 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | MPSA12 | DARLINGTON TRANSISTOR MPSA12
CASE 29-02, STYLE 1
TO-92 (TO-226AA)
DARLINGTON TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Emitter-Base Voltage Total Device Dissipation (S T"a = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCES v EBO PD
TJ- Tstg
Value 20 1 |
 Motorola Semiconductors |
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| 5 | MPSA12 | SILICON NPN DARLINGTON TRANSISTORS MPSA12 MPSA13 MPSA14
SILICON NPN DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA12 series devices are silicon NPN Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain.
MA |
 Central Semiconductor |
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| 4 | MPSA12 | NPN Darlington Transistor MPSA12
Discrete POWER & Signal Technologies
MPSA12
C
BE
TO-92
NPN Darlington Transistor
This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
Symbol
VCES VCBO VEBO |
 Fairchild |
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| 3 | MPSA12 | (MPSxxxx) TRANSISTOR w
w
.D w
t a
S a
e h
U 4 t e
.c
m o
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 KSL Microdevices |
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