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Datasheet H5N2509P Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | H5N2509P | Silicon N Channel MOS FET H5N2509P
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance: R DS (on) = 0.053 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V) • High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V) • Low gate charge: Qg = |
Renesas |
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2 | H5N2509P | SILICON N CHANNEL MOSFET SWITCHING ߅ቴ᭽ฦ
⾗ᢱਛߩ ޟᣣ┙ᚲޠ ޟᣣ┙::╬ޠฬ⒓ߩᩣᑼળ␠࡞ࡀࠨࠬ࠹ࠢࡁࡠࠫ߳ߩᄌᦝߦߟߡ ޔ
ޓᐕᣣࠍએߞߡਃ⪉㔚ᯏᩣᑼળ␠߮ᩣᑼળ␠ᣣ┙ᚲߩࡑࠗࠦࡦޔ ࡠࠫ࠶ࠢޔ ࠕ� |
Hitachi Semiconductor |
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1 | H5N2509P | SILICON N CHANNEL MOSFET SWITCHING ߅ቴ᭽ฦ
⾗ᢱਛߩ ޟᣣ┙ᚲޠ ޟᣣ┙::╬ޠฬ⒓ߩᩣᑼળ␠࡞ࡀࠨࠬ࠹ࠢࡁࡠࠫ߳ߩᄌᦝߦߟߡ ޔ
ޓᐕᣣࠍએߞߡਃ⪉㔚ᯏᩣᑼળ␠߮ᩣᑼળ␠ᣣ┙ᚲߩࡑࠗࠦࡦޔ ࡠࠫ࠶ࠢޔ ࠕ� |
Hitachi Semiconductor |
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