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Datasheet GJ3403 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GJ3403 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/02/25 REVISED DATE :
GJ3403
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 200m -10A
The GJ3403 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effecti |  GTM | mosfet |
GJ3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GJ3055 | N-Channel Enhancement Mode Power MOSFET
Pb Free Plating Product
ISSUED DATE :2003/07/31 REVISED DATE :2007/01/25D
GJ3055
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 26m 15A
Description
The GJ3055 provide the designer with the best combination of fast switching, ruggedized device design, low on-re GTM mosfet | | |
| 2 | GJ3055S | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/05/19 REVISED DATE :2006/11/09B
GJ3055S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 25m 18A
Description
The GJ3055S provide the designer with the best combination of fast switching, ruggedized device design, low on- GTM mosfet | | |
| 3 | GJ31C | NPN EPITAXIAL PLANAR TRANSISTOR
ISSUED DATE :2005/05/12 REVISED DATE :
GJ31C
Description Features
NP N EP ITAXI AL PL ANAR T RANSI STOR
The GJ31C is designed for use in general purpose amplifier and switching applications. *Complementary to GJ32C
Package Dimensions TO-252
REF. A B C D E F S
Millimeter Min GTM transistor | | |
| 4 | GJ32C | PNP EPITAXIAL PLANAR TRANSISTOR
ISSUED DATE :2005/05/12 REVISED DATE :
GJ32C
Description Features
P N P EP I TAXI AL PL AN AR T R AN SI ST O R
The GJ32C is designed for use in general purpose amplifier and switching applications. *Complementary to GJ31C
Package Dimensions TO-252
REF. A B C D E F S
Millime GTM transistor | | |
| 5 | GJ3302 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/08/24 REVISED DATE :
GJ3302
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 50m 16A
The GJ3302 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effect GTM mosfet | | |
| 6 | GJ3303 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/08/16 REVISED DATE :
GJ3303
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 25m 28A
The GJ3303 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effect GTM mosfet | | |
| 7 | GJ3310 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/12/05 REVISED DATE :
GJ3310
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-20V 150m -10A
The GJ3310 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The TO-252 pac GTM mosfet | |
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