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Datasheet GF45-706A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GF45-706A | Diode, Rectifier |  American Microsemiconductor | diode |
GF4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GF40-931 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | GF44-706A | Diode, Rectifier American Microsemiconductor diode | | |
| 3 | GF4410 | N-channel Enhancement-mode MOSFET GF4410
N-Channel Enhancement-Mode MOSFET
H C N T E TRE NF E G
SO-8
0.197 (5.00) 0.189 (4.80)
VDS 30V RDS(ON) 13.5mΩ ID 10A
®
8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 4
Dimensions in inches and (millimeters)
0.019 (0.48) x 45 ° 0.010 (0.25)
0.05 (1.27) 0  General Semiconductor mosfet | | |
| 4 | GF4412 | N-channel Enhancement-mode MOSFET GF4412
N-Channel Enhancement-Mode MOSFET
H C N T E TRE NF E G
SO-8
0.197 (5.00) 0.189 (4.80)
VDS 30V RDS(ON) 28mΩ ID 7A
®
8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 4
Dimensions in inches and (millimeters)
0.019 (0.48) x 45 ° 0.010 (0.25)
0.05 (1.27) 0.04 General Semiconductor mosfet | | |
| 5 | GF4435 | P-Channel Enhancement-Mode MOSFET
GF4435
P-Channel Enhancement-Mode MOSFET
H C N T E TRE NF E G
SO-8
0.197 (5.00) 0.189 (4.80) 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 4
VDS –30V RDS(ON) 20mΩ ID –8.0A
®
Dimensions in inches and (millimeters)
0.019 (0.48) x 45 ° 0.010 (0.25)
0.05 (1. General Semiconductor mosfet | | |
| 6 | GF4450 | N-Channel Enhancement-Mode MOSFET
GF4450
N-Channel Enhancement-Mode MOSFET
H C N T E TRE NF E G
SO-8
0.197 (5.00) 0.189 (4.80) 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 4
VDS 60V RDS(ON) 24mΩ ID 7.5A
®
t c u rod P New
0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min.
0.009 (0.23) 0.007 (0.18)
Dim General Semiconductor mosfet | | |
| 7 | GF45-706A | Diode, Rectifier American Microsemiconductor diode | |
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