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Datasheet DAN222G Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | DAN222G | Common Cathode Silicon Dual Switching Diode DAN222G Common Cathode Silicon Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications, where board space | ON Semiconductor | diode |
DAN Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | DAN201 | Epitaxial Planar Silicon Diode Arrays ROHM Semiconductor diode | | |
2 | DAN202 | Dual Surface Mount Fast Switching Diode DAN202
Dual Surface Mount Fast Switching Diode
SOT-23
Features
High speed. High reliability. Suitable for hig packing density layout.
Applications
Ultra high speed switching Silicon epitaxial planar
Pb
Lead-free
Ordering Information
Dimensions in inches and (millimeters)
Type No LGE diode | | |
3 | DAN202 | Switching Diode MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
DAN202
Features
• High reliability • High speed (Trr=1.5ns Typ.) • Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. Se MCC diode | | |
4 | DAN202 | SWITCHING DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
DAN202 SWITCHING DIODE
FEATURES High Speed High Reliability Suitable for High Packing Density Layout APPLICATIONS High Speed Switching
MARKING: N
N
SOT-23
MAXIMUM RATINGS ( Ta=25℃ unless otherwi JCET diode | | |
5 | DAN202C3 | Switching Diode CYStech Electronics Corp.
Switching Diode
Spec. No. : C303C3 Issued Date : 2010.11.02 Revised Date : Page No. : 1/6
DAN202C3
Features
• • • • Fast switching speed. Ultra small surface mount package High conductance Pb-free package
Equivalent Circuit
DAN202C3
Outline
SOT-523
Common cathod CYStech Electronics diode | | |
6 | DAN202K | DIODE RoHS
SWITCHING DIODE
DAN202K
Features
DPower dissipation PD : 225 mW (Tamb=25 C)
TPluse Drain IF : 200 mA
.,LReverse Voltage VR : 70V Operating and storage junction temperature range
OTj, Tstg : -55 C to +150 C
1
1.
2.4 1.3
SOT-23
3
2
CANODE-CATHODE IC3 N1 2
ANODE CATHODE
OMarking:A4
2.9 1.9 WEJ diode | | |
7 | DAN202K | Ultra high speed switching Diodes
DAN222M/DAN222/DAN202U/DAN202K DAP222M/DAP222/DAP202U/DAP202K DA227
Switching diode
DAN222M / DAN222 / DAN202U / DAN202K DAP222M / DAP222 / DAP202U / DAP202K DA227
zApplication Ultra high speed switching zExternal dimensions (Unit : mm)
DAN222M / DAP222M DAN222 / DAP222
zFeatures 1) Four t Diodes Incorporated data | |
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