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Datasheet CMNDM8001 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | CMNDM8001 | SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applicatio | Central Semiconductor | mosfet |
CMN Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | CMN1-15P-TAG203 | NANO METAL SHELL SINGLE ROW POS 1 .005 2x #0-80 UNF-2B THREADED HOLE OR JACKSCREW (OPTIONAL) .105
.105
.005 2x #0-80 UNF-2B THREADED HOLE
OR JACKSCREW (OPTIONAL)
A B C
.025 TYP
2x .070 .002 THRU .115
2x #0-80 UNF-2A JACKSCREW WITH .050 HEX (OPTIONAL)
SERIES CMN1
NANO METAL SHELL SINGLE ROW WITH LEADS
PLUG
A B C
.025 TYP
P CRISTEK data | | |
2 | CMN1-xxP-xxxxxx | NANO METAL SHELL SINGLE ROW POS 1 .005 2x #0-80 UNF-2B THREADED HOLE OR JACKSCREW (OPTIONAL) .105
.105
.005 2x #0-80 UNF-2B THREADED HOLE
OR JACKSCREW (OPTIONAL)
A B C
.025 TYP
2x .070 .002 THRU .115
2x #0-80 UNF-2A JACKSCREW WITH .050 HEX (OPTIONAL)
SERIES CMN1
NANO METAL SHELL SINGLE ROW WITH LEADS
PLUG
A B C
.025 TYP
P CRISTEK data | | |
3 | CMN1-xxS-xxxxxx | NANO METAL SHELL SINGLE ROW POS 1 .005 2x #0-80 UNF-2B THREADED HOLE OR JACKSCREW (OPTIONAL) .105
.105
.005 2x #0-80 UNF-2B THREADED HOLE
OR JACKSCREW (OPTIONAL)
A B C
.025 TYP
2x .070 .002 THRU .115
2x #0-80 UNF-2A JACKSCREW WITH .050 HEX (OPTIONAL)
SERIES CMN1
NANO METAL SHELL SINGLE ROW WITH LEADS
PLUG
A B C
.025 TYP
P CRISTEK data | | |
4 | CMN2300 | N-Channel Enhancement Mode Field Effect Transistor CMN2300
N-Channel Enhancement Mode Field Effect Transistor
General Description
These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications Cmos transistor | | |
5 | CMN2305 | P-Channel Enhancement Mode Field Effect Transistor CMN2305
P-Channel Enhancement Mode Field Effect Transistor
General Description
The CMN2305 is P-channel enhancement mode Power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and Cmos transistor | | |
6 | CMN2308 | N-Channel Enhancement Mode Field Effect Transistor CMN2308
N-Channel Enhancement Mode Field Effect Transistor
General Description
The CMN2308 is the N-Channel enhancement mode power field effect transistors using advanced trench technology to provide excellent RDS(ON). These devices are particularly suited for low voltage application , such as hig Cmos transistor | | |
7 | CMN2309 | P-Channel Enhancement Mode Field Effect Transistor CMN2309
P-Channel Enhancement Mode Field Effect Transistor
General Description
This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications.
Features RDS(ON)<250mΩ @ VGS=-10V RD Cmos transistor | |
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Número de pieza | Descripción | Fabricantes | |
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