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k246 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | |
1 | k246 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2461
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2461 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2
FEATURES
| ![]() NEC |
2 | k246 | N-CHANNEL JUNCTION TYPE Field Effect Transistor | ![]() Toshiba |
3 | k246 | Small switching (60V/ 2A) Transistors
Small switching (60V, 2A)
2SK2463
FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm)
FAbsolut | ![]() ROHM Semiconductor |
4 | k246 | Ultrahigh-Speed Switching Applications | ![]() Sanyo Semicon Device |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
![]() Micross |
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B8524 | SAW Components |
![]() TDK |
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BA6343 | Stepping motor driver |
![]() ROHM |
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