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KTD718 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | |
1 | KTD718 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type KTB688
APPLICATIONS ·Audio frequency power amplifier applications ·Recommend for 45-50W audio frequency amplifier
output s | ![]() Inchange Semiconductor |
2 | KTD718 | TRIPLE DIFFUSED NPN TRANSISTOR | ![]() KEC |
3 | KTD718B | TRIPLE DIFFUSED NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES Recommended for 45 50W Audio Frequency Amplifier Output Stage. Complementary to KTB688B.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Curren | ![]() KEC |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
![]() Micross |
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B8524 | SAW Components |
![]() TDK |
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BA6343 | Stepping motor driver |
![]() ROHM |
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