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KTD2061 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | |
1 | KTD2061 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KTD2061
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min) ·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ (IC= 0.5A, IB= 50mA) ·Complement to Type KTB1369
APPLICATIONS ·High | ![]() Inchange Semiconductor |
2 | KTD2061 | EPITAXIAL PLANAR NPN TRANSISTOR | ![]() KEC |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
![]() Micross |
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B8524 | SAW Components |
![]() TDK |
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BA6343 | Stepping motor driver |
![]() ROHM |
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