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KTD2060 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | |
1 | KTD2060 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KTD2060
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Collector Power Dissipation-
: PC= 25W@ TC= 25℃ ·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ (IC= 3A, IB= 0.3A) ·Comp | ![]() Inchange Semiconductor |
2 | KTD2060 | TRIPLE DIFFUSED NPN TRANSISTOR | ![]() KEC |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
![]() Micross |
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B8524 | SAW Components |
![]() TDK |
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BA6343 | Stepping motor driver |
![]() ROHM |
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