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KTD1898 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | |
1 | KTD1898 | NPN Transistor RoHS KTD1898
KTD1898 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM: 500 mW (Tamb=25℃)
.,LCollector current
ICM: Collector-base voltage
1A
OV(BR)CBO:
100 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3
I | ![]() WEJ |
2 | KTD1898 | NPN Transistors | ![]() Kexin |
3 | KTD1898 | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE) SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. FEATURES
1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTB1260.
KTD1898
EPITAXIAL PLANAR NPN TRANSISTOR
A H
C
G
J B E
D
D K F F
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Vo | ![]() KEC(Korea Electronics) |
4 | KTD1898 | Epitaxial Planar NPN Transistors | ![]() Weitron |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
![]() Micross |
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B8524 | SAW Components |
![]() TDK |
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BA6343 | Stepping motor driver |
![]() ROHM |
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