|
![]() |
KTD1863 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | |
1 | KTD1863 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES High Breakdown Voltage and High Current : VCEO=80V, IC=1A. Low VCE(sat) Complementary to KTB1241.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Curre | ![]() KEC |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
![]() Micross |
|
B8524 | SAW Components |
![]() TDK |
|
BA6343 | Stepping motor driver |
![]() ROHM |
0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
DataSheetWiki.com | 2020 | Contactez-nous | Link | English |