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KTD1510 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | |
1 | KTD1510 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
KTD1510
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.5V(Max) @IC= 7A ·High DC Current Gain
: hFE= 5000(Min) @ IC= 7A, VCE= | ![]() Inchange Semiconductor |
2 | KTD1510 | EPITAXIAL PLANAR NPN TRANSISTOR | ![]() KEC |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
![]() Micross |
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B8524 | SAW Components |
![]() TDK |
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BA6343 | Stepping motor driver |
![]() ROHM |
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