|
![]() |
KTD1302 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | |
1 | KTD1302 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
AUDIO MUTING APPLICATION.
FEATURES High Emitter-Base Voltage : VEBO=12V(Min.). High Reverse hFE
: Reverse hFE=20(Min.) (VCE=2V, IC=4mA). Low on Resistance :RON=0.6 (Typ.) (IB=1mA).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emit | ![]() KEC |
2 | KTD1302 | NPN Transistors | ![]() Kexin |
3 | KTD1302 | TRANSISTOR KTD1302
TRANSISTOR (NPN)
FEATURES - Small Flat Package - Audio Muting Application - High Emitter-Base Voltage
SOT-89-3L
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter V | ![]() Jin Yu Semiconductor |
4 | KTD1302 | TRANSISTOR | ![]() TY Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
![]() Micross |
|
B8524 | SAW Components |
![]() TDK |
|
BA6343 | Stepping motor driver |
![]() ROHM |
0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
DataSheetWiki.com | 2020 | Contactez-nous | Link | English |