|
![]() |
KTD1003 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | |
1 | KTD1003 | EPITAXIAL PLANAR NPN TRANSISTOR J
BL E
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES High DC Current Gain
: hFE=800 3200. (VCE=5.0V, IC=300mA). Wide Area of Safe Operation. Low Collector Saturation Voltage
: VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collecto | ![]() KEC |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
![]() Micross |
|
B8524 | SAW Components |
![]() TDK |
|
BA6343 | Stepping motor driver |
![]() ROHM |
0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
DataSheetWiki.com | 2020 | Contactez-nous | Link | English |