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KDV240 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | |
1 | KDV240 | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO) SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF Band Radio.
KDV240
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
B 1
G
FEATURES
High Capacitance Ratio : C1V, C4V =2.1(Typ.) Low Series Resistance : rs=0.28 Useful for Small Size Tuner. (Typ.)
K
A
H
E
2 D
J C I
MAXIMUM RAT | ![]() KEC(Korea Electronics) |
2 | KDV240E | SILICON EPITAXIAL PLANAR DIODE | ![]() KEC |
3 | KDV240E | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO) SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF Band Radio.
KDV240E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
High Capacitance Ratio : C1V, C4V =2.1(Typ.) Low Series Resistance : rs=0.28 Useful for Small Size Tuner. (Typ.)
CATHODE MARK
FEATURES
C 1
E
2 D F
MAXIMUM RATING (Ta=25
CHAR | ![]() KEC(Korea Electronics) |
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