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KDV273E Schematic ( PDF Datasheet ) - VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
| KDV273E | SILICON EPITAXIAL PLANAR DIODE SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF, VHF BAND.
FEATURES High Capacitance Ratio : C1V, C4V =2.0(Typ.) Low Series Resistance : rs=0.39 (Typ.)
KDV273E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature
|  KEC | diode |
| KDV273E | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND) | .gif){kind=small} KEC(Korea Electronics) | diode |
Besondere Datenblatt
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KTD1146 EPITAXIAL PLANAR NPN TRANSISTOR. KEC |
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