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KDV251M Schematic ( PDF Datasheet ) - VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB/C/P PLL)
| KDV251M | SILICON EPITAXIAL PLANAR DIODE SEMICONDUCTOR
TECHNICAL DATA
VCO FOR C, P, CB PLL
FEATURES Low Series Resistance : 0.6 (Max.) High Capacitance Ratio : 1.7(Min.) 2.2(Max.)
KDV251M, S
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature
VR |  KEC | diode |
| KDV251M | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB/C/P PLL) | .gif){kind=small} KEC(Korea Electronics) | diode |
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