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KTD1302 Datenblatt PDF |
| No | Teilenummer | Beschreibung | Hersteller |
| 1 | KTD1302 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
AUDIO MUTING APPLICATION.
FEATURES High Emitter-Base Voltage : VEBO=12V(Min.). High Reverse hFE
: Reverse hFE=20(Min.) (VCE=2V, IC=4mA). Low on Resistance :RON=0.6 (Typ.) (IB=1mA).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emit |  KEC |
| 2 | KTD1302 | NPN Transistors |  Kexin |
| 3 | KTD1302 | TRANSISTOR KTD1302
TRANSISTOR (NPN)
FEATURES - Small Flat Package - Audio Muting Application - High Emitter-Base Voltage
SOT-89-3L
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter V |  Jin Yu Semiconductor |
| 4 | KTD1302 | TRANSISTOR |  TY Semiconductor |
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