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PDF STW65N65DM2AG Data sheet ( Hoja de datos )
| Número de pieza | STW65N65DM2AG | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
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STW65N65DM2AG
Automotive-grade N-channel 650 V, 0.042 Ω typ., 60 A
Power MOSFET MDmesh™ DM2 in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
Features
Order code
STW65N65DM2AG
VDS
650 V
RDS(on)
max.
0.05 Ω
ID PTOT
60 A 446 W
• Designed for automotive applications and
AEC-Q101 qualified
• Fast-recovery body diode
• Extremely low gate charge and input
capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
Applications
• Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STW65N65DM2AG
Table 1: Device summary
Marking
65N65DM2
Package
TO-247
Packing
Tube
August 2015
DocID028164 Rev 1
This is information on a product in full production.
1/12
www.st.com
1 page  
STW65N65DM2AG
Symbol
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
Source-drain current
- 60 A
Source-drain current
(pulsed)
- 240 A
Forward on voltage
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
VGS = 0 V, ISD = 60 A
ISD = 60 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16: "Test
circuit for inductive load
switching and diode recovery
times")
- 1.6 V
- 154
ns
- 0.94
µC
- 12.2
A
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
ISD = 60 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
- 288
- 3.65
- 25.4
ns
µC
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID028164 Rev 1
5/12
5 Page 
STW65N65DM2AG
Revision history
5 Revision history
Date
04-Aug-2015
Table 10: Document revision history
Revision
Changes
1 Initial release.
DocID028164 Rev 1
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STW65N65DM2AG.PDF ] | |
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