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PDF STW56N60DM2 Data sheet ( Hoja de datos )
| Número de pieza | STW56N60DM2 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
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STW56N60DM2
N-channel 600 V, 0.052 Ω typ., 50 A MDmesh™ DM2
Power MOSFET in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
D(2)
G(1)
Features
Order code VDS
STW56N60DM2 600 V
RDS(on)
max.
0.060 Ω
ID
50 A
PTOT
360 W
• Fast-recovery body diode
• Extremely low gate charge and input
capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
Applications
• Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
S(3)
Order code
STW56N60DM2
AM15572v1_no_tab
Table 1: Device summary
Marking
56N60DM2
Package
TO-247
Packing
Tube
June 2015
DocID026982 Rev 3
This is information on a product in full production.
1/12
www.st.com
1 page  
STW56N60DM2
Symbo
l
ISD
ISDM
VSD(1)
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Table 8: Source-drain diode
Test conditions
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 50 A
ISD = 50 A,
di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive
load switching and diode
recovery times")
ISD = 50 A,
di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 16: "Test circuit
for inductive load switching
and diode recovery times")
Electrical characteristics
Min. Typ. Max. Unit
- 50 A
- 200 A
- 1.6 V
- 140
ns
- 0.7
µC
- 10.6
A
- 245
- 2.6
ns
µC
- 21
A
Notes:
(1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID026982 Rev 3
5/12
5 Page 
STW56N60DM2
Revision history
5 Revision history
Date
08-Oct-2014
09-Jun-2015
15-Jun-2015
Revision
1
2
3
Table 10: Document revision history
Changes
First release.
Text and formatting changes throughout document.
On cover page:
- updated title description and features
In Section 1 Electrcial ratings:
- updated Table 2. Absolute maximum ratings
- updated Table 4. Avalanche characteristics
In Section 2 Electrical characteristics:
- updated and renamed Table 5. Static (was On /off states)
- updated Table 6. Dynamic
- updated Table 7. Switching times
- updated Table 8. Source drain diode
Added Section 2.1 Electrical characteristics (curves)
Datasheet promoted from preliminary data to production data
DocID026982 Rev 3
11/12
11 Page | ||
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