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PDF 2SD667A Data sheet ( Hoja de datos )
| Número de pieza | 2SD667A | |
| Descripción | NPN EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Dc Components | |
| Logotipo |  |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SD667A
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency power amplifier
applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
120
100
Emitter-Base Voltage
VEBO
5
Collector Current (DC)
Collector Current (pulse)
IC 1
IC 2
Total Power Dissipation
PD 900
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 to +150
Unit
V
V
V
A
A
mW
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Volatge
BVCBO
120
-
- V IC=10µA, IE=0
Collector-Emitter Breakdown Voltage
BVCEO
100
-
- V IC=1mA, IB=0
Emitter-Base Breakdown Volatge
BVEBO
5
-
- V IE=10µA, IC=0
Collector Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
ICBO
VCE(sat)
VBE(on)
-
-
-
- 10 µA VCB=100V, IE=0
- 1 V IC=500mA, IB=50mA
- 1.5 V IC=150mA, VCE=5V
DC Current Gain(1)
hFE1
60
-
200 - IC=150mA, VCE=5V
hFE2
30
-
- - IC=500mA, VCE=5V
Transition Frequency
fT
- 140
- MHz IC=150mA, VCE=5V
Output Capacitance
Cob - 12 - pF VCB=10V, f=1MHz, IE=0
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Classification of hFE
Rank
B
Range
60~120
C
100~200
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SD667A.PDF ] | |
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