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PDF RU6H2R Data sheet ( Hoja de datos )
| Número de pieza | RU6H2R | |
| Descripción | N-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RU6H2R (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Features
•600V/2A,
RDS (ON) =4Ω (Typ.) @ VGS=10V
• Gate charge minimized
• Low Crss( Typ. 5pF)
• Extremely high dv/dt capability
• 100% avalanche tested
• Lead Free and Green Available
RU6H2R
N-Channel Advanced Power MOSFET
MOSFET
Pin Description
TO-220
Applications
• High efficiency switch mode power
supplies
• Lighting
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
②
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A – MAY., 2012
Rating
600
±30
150
-55 to 150
2
①
8
①
2
①
1.2
62.5
25
2.0
9
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
www.ruichips.com
1 page  
Typical Characteristics
Drain-Source On Resistance
RU6H2R
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
VSD - Source-Drain Voltage (V)
Gate Charge
VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A – MAY., 2012
5
QG - Gate Charge (nC)
www.ruichips.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RU6H2R.PDF ] | |
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