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Número de pieza | RU5H13R | |
Descripción | N-Channel Advanced Power MOSFET | |
Fabricantes | Ruichips | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RU5H13R (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! RU5H13R
N-Channel Advanced Power MOSFET
Features
• 500V/13A,
RDS (ON) =420mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Fast Switching
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
Applications
• High efficiency switch mode power supplies
• Lighting
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
1
GD
S
TO220
D
G
S
N-Channel MOSFET
Rating
Unit
TC=25°C
500
±30
150
-55 to 150
13
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
52 A
13
A
8.2
208
W
83
0.6 °C/W
62.5 °C/W
500 mJ
www.ruichips.com
1 page ℃
RU5H13R
Typical Characteristics
Output Characteristics
10
6,8,10V
8
Drain-Source On Resistance
1000
800
6 5V 600
10V
4 400
3V
2 200
0
02468
VDS - Drain-Source Voltage (V)
10
Drain-Source On Resistance
2.5
VGS=10V
ID=6.5A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=420mΩ
-25 0 25 50 75 100 125
TJ - Junction Temperature (°C)
150
Capacitance
2700
2400
Frequency=1.0MHz
2100
1800
1500
Ciss
1200
900
600
300
Crss
0
1
Coss
10 100
1000
VDS - Drain-Source Voltage (V)
0
0
100.0
5 10
ID - Drain Current (A)
15
Source-Drain Diode Forward
10.0
TJ=150°C
1.0 TJ=25°C
0.1
0.2 0.4 0.6 0.8 1 1.2 1.4
VSD - Source-Drain Voltage (V)
Gate Charge
10
9 VDS=480V
IDS=13A
8
7
6
5
4
3
2
1
0
0
10 20 30 40
QG - Gate Charge (nC)
50
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
5
www.ruichips.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RU5H13R.PDF ] |
Número de pieza | Descripción | Fabricantes |
RU5H13R | N-Channel Advanced Power MOSFET | Ruichips |
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