DataSheet.es    


PDF RU5H13R Data sheet ( Hoja de datos )

Número de pieza RU5H13R
Descripción N-Channel Advanced Power MOSFET
Fabricantes Ruichips 
Logotipo Ruichips Logotipo



Hay una vista previa y un enlace de descarga de RU5H13R (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! RU5H13R Hoja de datos, Descripción, Manual

RU5H13R
N-Channel Advanced Power MOSFET
Features
• 500V/13A,
RDS (ON) =420mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Fast Switching
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
Applications
• High efficiency switch mode power supplies
• Lighting
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
1
GD
S
TO220
D
G
S
N-Channel MOSFET
Rating
Unit
TC=25°C
500
±30
150
-55 to 150
13
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
52 A
13
A
8.2
208
W
83
0.6 °C/W
62.5 °C/W
500 mJ
www.ruichips.com

1 page




RU5H13R pdf
RU5H13R
Typical Characteristics
Output Characteristics
10
6,8,10V
8
Drain-Source On Resistance
1000
800
6 5V 600
10V
4 400
3V
2 200
0
02468
VDS - Drain-Source Voltage (V)
10
Drain-Source On Resistance
2.5
VGS=10V
ID=6.5A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=420mΩ
-25 0 25 50 75 100 125
TJ - Junction Temperature (°C)
150
Capacitance
2700
2400
Frequency=1.0MHz
2100
1800
1500
Ciss
1200
900
600
300
Crss
0
1
Coss
10 100
1000
VDS - Drain-Source Voltage (V)
0
0
100.0
5 10
ID - Drain Current (A)
15
Source-Drain Diode Forward
10.0
TJ=150°C
1.0 TJ=25°C
0.1
0.2 0.4 0.6 0.8 1 1.2 1.4
VSD - Source-Drain Voltage (V)
Gate Charge
10
9 VDS=480V
IDS=13A
8
7
6
5
4
3
2
1
0
0
10 20 30 40
QG - Gate Charge (nC)
50
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
5
www.ruichips.com

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet RU5H13R.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
RU5H13RN-Channel Advanced Power MOSFETRuichips
Ruichips

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar