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PDF TSM60N03 Data sheet ( Hoja de datos )
| Número de pieza | TSM60N03 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
TSM60N03
30V N-Channel Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
30 4.5 @ VGS =10V
ID (A)
60
Features
● Advanced Trench Technology
● Low RDS(ON) 4.5mΩ (Max.)
● Low gate charge typical @ 12nC (Typ.)
● Low Crss typical @ 140pF (Typ.)
Ordering Information
Part No.
Package
Packing
TSM60N03CP ROG TO-252 2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Block Diagram
N-Channel MOSFET
Absolute Maximum Rating (TC = 25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
TC = 25℃
VGS
Continuous Drain Current
Drain Current-Pulsed *
TC = 70℃
TA = 25℃
TA = 70℃
ID
IDM
Avalanche Current, L = 0.1mH
IAS, IAR
Avalanche Energy, L = 0.1mH
EAS, EAR
Maximum Power Dissipation
TC = 25℃
TC = 70℃
TA = 25℃
PD
TA = 70℃
Storage Temperature Range
TSTG
Operating Junction Temperature Range
TJ
* Limited by maximum junction temperature
Limit
30
±20
60
48
19
15
140
38
72
41
26
2.5
1.6
-55 to +150
-55 to +150
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
RӨJC
RӨJA
Limit
3
50
Unit
V
V
A
A
A
mJ
W
℃
℃
Unit
℃/W
℃/W
1/4 Version: A12
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TSM60N03.PDF ] | |
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