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Número de pieza | SMG2305 | |
Descripción | P-Channel MosFET | |
Fabricantes | SeCoS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SMG2305 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Elektronische Bauelemente
SMG2305
-4.2A, -20V,RDS(ON) 65m
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SMG2305 provide the designer with the best
combination of fast switching, low on-resistance
and cost-effectiveness.
The SMG2305 is universally preferred for all commercial
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
Features
* Super high dense cell design for extremely low RDS(ON)
* Reliable and rugged
Applications
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
A
L
3
S Top View
21
B
D
G
C
H
Drain
Gate
Source
G
J
K
D
SC-59
Dim Min Max
A 2.70 3.10
B 1.40 1.60
C 1.00 1.30
D 0.35 0.50
G 1.70 2.10
H 0.00 0.10
J 0.10 0.26
K 0.20 0.60
L 0.85 1.15
S 2.40 2.80
All Dimension in mm
Marking : 2305
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TA=25 oC
ID@TA=70 oC
IDM
PD@TA=25 oC
Tj, Tstg
S
Ratings
-20
±12
-4.2
-3.4
-10
1.38
0.01
-55~+150
Unit
V
V
A
A
A
W
W / oC
oC
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Symbol
Rthj-a
Ratings
90
Unit
oC /W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet SMG2305.PDF ] |
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