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PDF MMBT3906FW Data sheet ( Hoja de datos )
| Número de pieza | MMBT3906FW | |
| Descripción | PNP Silicon General Purpose Transistor | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
MMBT3906FW
PNP Silicon
General Purpose Transistor
FEATURES
· Epitaxial Planar Die Construction
· Complementary NPN Type Available
(MMBT3904FW)
· Ideal for Medium Power Amplification and
Switching
RoHS Compliant Product
A
L
Top View
BS
COLLECTOR
3
3V
1
BASE
1
2
SOT-523
D
2
EMITTER
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 4 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT3906FW = 3N, 2A
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
G
C
H
K
Value
–40
–40
–5.0
–200
Unit
Vdc
Vdc
Vdc
mAdc
Max
200
1.6
600
300
2.4
400
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
SOT-523
Dim Min Max
A 1.500 1.700
B 0.750 0.850
C 0.700 0.900
D 0.250 0.350
G 0.900 1.100
H 0.000 0.100
J 0.100 0.200
K 0.220 0.500
J
L 0.400 0.600
S 1.500 1.700
V 0.200 0.400
All Dimension in mm
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
Vdc
–40 —
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V(BR)CBO
Vdc
–40 —
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO
Vdc
–5.0 —
Base Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc)
IBL nAdc
— –50
Collector Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc)
1. FR– 4 = Minimum Pad
2. Alumina = 1.0 1.0 inchs. 99.5% alumina.
ICEX
nAdc
— –50
REM : Thermal Clad is a trademark of the Bergquist Company.
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 5
1 page  
Elektronische Bauelemente
MMBT3906FW
PNP Silicon
General Purpose Transistor
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
1.0 +25°C
0.7
– 55°C
0.5
0.3
0.2
VCE = 1.0 V
0.1
0.1
1.0
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, Collector Current (mA)
Figure 13. DC Current Gain
0.8
IC = 1.0 mA
0.6
10 mA
30 mA
20 30
50 70 100
200
TJ = 25°C
100 mA
0.4
0.2
0
0.01
0.02 0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IB, Base Current (mA)
Figure 14. Collector Saturation Region
2.0 3.0
5.0 7.0 10
1.0
TJ = 25°C
0.8
0.6
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.4
VCE(sat) @ IC/IB = 10
0.2
0
1.0 2.0 5.0 10
20
50
IC, Collector Current (mA)
100 200
Figure 15. “ON” Voltages
1.0
0.5 qVC FOR VCE(sat)
0
– 0.5
– 1.0
– 1.5 qVB FOR VBE(sat)
+25°C TO +125°C
– 55°C TO +25°C
+25°C TO +125°C
– 55°C TO +25°C
– 2.0
0
20 40 60 80 100 120 140 160 180 200
IC, Collector Current (mA)
Figure 16. Temperature Coefficients
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 5 of 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MMBT3906FW.PDF ] | |
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