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PDF STB1277 Data sheet ( Hoja de datos )
| Número de pieza | STB1277 | |
| Descripción | PNP Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
STB1277
-2A , -30V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Switching and Amplification.
High Total Power Dissipation.
High hFE and Good Linearity
TO-92
CLASSIFICATION OF hFE
Product-Rank
STB1277-O
Range
100~200
STB1277-Y
160~320
3
Base
Collector
2
1Emitter
2Collector
3Base
1
Emitter
REF.
A
B
C
D
E
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
REF.
F
G
H
J
K
Millimeter
Min. Max.
0.30 0.51
1.27 TYP.
1.10 1.40
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
VCBO
-30
Collector to Emitter Voltage
VCEO
-30
Emitter to Base Voltage
VEBO
-5
Collector Current - Continuous
IC -2
Collector Power Dissipation
PC 0.625
Junction, Storage Temperature
TJ, TSTG
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
-30
-
-
V IC= -0.1mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
-30
-
-
V IC= -1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V IE= -1mA, IC=0
Collector Cut-Off Current
ICBO - - -0.1 µA VCB= -30V, IE=0
Emitter Cut-Off Current
IEBO - - -0.1 µA VEB= -5V, IC=0
DC Current Gain
hFE 100 - 320
VCE= -2V, IC= -500mA
Collector to Emitter Saturation Voltage VCE(sat)
-
- -0.8 V IC= -2A, IB= -0.2A
Base to Emitter Saturation Voltage
VBE(sat)
-
- -1 V IC= -500mA, VCE= -2V
Transition Frequency
fT - 170 - MHz VCE= -5V, IC= -50mA
Collector Output Capacitance
Cob - 48 - pF VCB= -10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
08-May-2013 Rev. A
Any changes of specification will not be informed individually.
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