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PDF RU75110Q Data sheet ( Hoja de datos )
| Número de pieza | RU75110Q | |
| Descripción | N-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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RU75110Q
N-Channel Advanced Power MOSFET
Features
• 75V/110A,
RDS (ON) =5.5mΩ(Typ.)@VGS=10V
• Ultra Low On-Resistance
• Exceptional dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• High Speed Power Switching
• UPS
Pin Description
G
DS
TO247
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
1
S
N-Channel MOSFET
Rating
Unit
TC=25°C
75
±25
175
-55 to 175
110
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
440 A
110
A
82
192
W
96
0.78 °C/W
50 °C/W
400 mJ
www.ruichips.com
1 page  
RU75110Q
Typical Characteristics
Output Characteristics
200
180 8,9,10V
160 6V
140
120 5V
100
80 4V
60
40
3V
20
0
01234
VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=10V
ID=55A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=5.5mΩ
-25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
175
Capacitance
6000
5400
4800
Frequency=1.0MHz
4200
3600
Ciss
3000
2400
1800
1200
600 Crs
0s
1
Coss
10
VDS - Drain-Source Voltage (V)
100
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
5
20
18
15
13
10
8
5
3
0
0
100
Drain-Source On Resistance
Vgs=10
V
50 100 150
ID - Drain Current (A)
200
Source-Drain Diode Forward
TJ=175°C
10
1 TJ=25°C
0.1
0.2
0.4 0.6 0.8 1 1.2
VSD - Source-Drain Voltage (V)
1.4
10
9 VDS=60V
IDS=55A
8
Gate Charge
7
6
5
4
3
2
1
0
0
10 20 30 40
QG - Gate Charge (nC)
50
www.ruichips.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RU75110Q.PDF ] | |
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