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PDF STL8DN10LF3 Data sheet ( Hoja de datos )
| Número de pieza | STL8DN10LF3 | |
| Descripción | Dual N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL8DN10LF3
Automotive-grade dual N-channel 100 V, 25 mΩ typ., 7.8 A STripFET™ F3
Power MOSFET in a PowerFLAT™ 5x6 double island package
Datasheet — production data
Features
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Order code
STL8DN10LF3
VDS
100 V
RDS(on) max
35 mΩ
ID
7.8 A
• Designed for automotive applications and
AEC-Q101 qualified
• Logic level VGS(th)
• 175 °C maximum junction temperature
• 100% avalanche rated
• Wettable flank package
Figure 1. Internal schematic diagram
Applications
• Switching applications
Description
This device is a dual N-channel Power MOSFET
developed using STripFET™ F3 technology. It is
designed to minimize on-resistance and gate
charge to provide superior switching
performance.
Order code
STL8DN10LF3
Table 1. Device summary
Marking
Packages
8DN10LF3
PowerFLAT™ 5x6 double island
Packing
Tape and reel
July 2015
This is information on a product in full production.
DocID023009 Rev 6
1/15
www.st.com
1 page  
STL8DN10LF3
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 7.8 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7.8 A,
di/dt = 100 A/µs,
VDD=48 V, Tj=150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration= 300 µs, duty cycle 1.5%
- 7.8 A
- 31.2 A
- 1.3 V
- 42.5
ns
- 87
nC
- 4.08
A
DocID023009 Rev 6
5/15
15
5 Page 
STL8DN10LF3
Package information
Figure 19. PowerFLAT™ 5x6 double island recommended footprint (dimensions are
in mm)
BUBW\SH5:)BIS
DocID023009 Rev 6
11/15
15
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| PDF Descargar | [ Datasheet STL8DN10LF3.PDF ] | |
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