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PDF AUIRG4BC30U-S Data sheet ( Hoja de datos )
| Número de pieza | AUIRG4BC30U-S | |
| Descripción | UltraFast Speed IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
PD - 96335
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching,
>200 kHz in resonant mode
• Industry standard D2Pak & TO-262 package
• Lead-Free, RoHS Compliant
• Automotive Qualified *
AUIRG4BC30U-S
AUIRG4BC30U-SL
UltraFast Speed IGBT
C
VCES = 600V
G
E
n-channel
VCE(on) typ. = 1.95V
@VGE = 15V, IC = 12A
Benefits
• Typical Applications: SMPS, PFC
D2Pak
TO-262
AUIRG4BC30U-S AUIRG4BC30U-SL
GC
E
Absolute Maximum Ratings
Gate
Collector
Emitter
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond
those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for
extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM Pulsed Collector Current
ILM Clamped Inductive Load Current
VGE Gate-to-Emitter Voltage
EARV
Reverse Voltage Avalanche Energy
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
600
23
12
92
92
± 20
10
100
42
-55 to + 150
V
A
V
mJ
W
°C
Parameter
Typ.
Max.
Units
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient, ( PCB Mounted,steady-state)**
–––
–––
1.2 °C/W
40
* * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
* Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/01/10
1 page  
AUIRG4BC30U-S/SL
25 V GE = 15V
20
15
10
5
0A
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs.Case
Temperature
3.0 VGE = 15V
80µs PULSE WIDTH
IC = 24A
2.5
IC = 12A
2.0
IC = 6.0A
1.5 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
10
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
10
5
5 Page 
AUIRG4BC30U-S/SL
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
www.irf.com
11
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| PDF Descargar | [ Datasheet AUIRG4BC30U-S.PDF ] | |
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