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Número de pieza | DF10G6M4N | |
Descripción | Diode ( Rectifier ) | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
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No Preview Available ! TOSHIBA Diodes for Protecting against ESD
DF10G6M4N
Application
- ESD Protection
Note: This product is designed for protection against electrostatic discharge
(ESD) and is not intended for any other purpose, including, but not limited to,
voltage regulation.
Absolute Maximum Ratings (Ta = 25°C)
DF10G6M4N
Characteristic
Symbol Rating
Unit
Electrostatic discharge voltage
IEC61000-4-2(Contact)
IEC61000-4-2(Air)
VESD
(Note 1)
±23
kV
Peak pulse power ( tp = 8 / 20 s )
Maximum peak pulse current ( tp = 8 / 20 s )
Junction temperature
Storage temperature range
PPK
IPP
(Note 2)
Tj
Tstg
30
2
150
-55~150
W
A
°C
°C
DFN10
1:I/O 6:NC
2:I/O 7:NC
3:GND 8:NC
4:I/O 9:NC
5:I/O 10:NC
Note1 : according to IEC61000-4-2
Note2 : according to IEC61000-4-5
JEDEC
Note3:Using continuously under heavy loads (e.g. the application of high JEITA
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
TOSHIBA
if the operating conditions (i.e. operating temperature/current/voltage, etc.) Weight: 3.2mg (typ.)
are within the absolute maximum ratings.Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/ “Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
VRWM : Working peak reverse voltage
VBR : Reverse breakdown voltage
IBR : Reverse breakdown current
IR : Reverse Current
VC : Clamping Voltage
IPP : Peak pulse current
RDYN : Dynamic resistance
1 2015-09-29
1 page Insertion Loss (S21)
S21-f
DF10G6M4N
Ta=25℃
Frequency f (GHz)
IN →
SG
S21
OUT →
Network
DUT Analyzer
Fig. S21 measurement circuit
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
5 2015-09-29
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet DF10G6M4N.PDF ] |
Número de pieza | Descripción | Fabricantes |
DF10G6M4N | Diode ( Rectifier ) | Toshiba Semiconductor |
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