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PDF SI1414DH Data sheet ( Hoja de datos )
| Número de pieza | SI1414DH | |
| Descripción | N-Channel 30V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si1414DH
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
0.046 at VGS = 4.5 V
0.050 at VGS = 2.5 V
0.057 at VGS = 1.8 V
ID (A) a
4
4
4
Qg (TYP.)
5.7 nC
SOT-363
SC-70 Single (6 leads)
S
4
D
5
D
6
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC converters
• Boost converters
• Load switches
D
1
D
Top View
2
D
3
G
Marking Code: AP
Ordering Information:
Si1414DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TF = 25 °C
TF = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TF = 25 °C
TA = 25 °C
TF = 25 °C
Maximum Power Dissipation
TF = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
LIMIT
30
±8
4a
4a
4 a, b, c
3.7 a, b, c
20
2.3
1.3 b, c
2.8
1.8
1.56 b, c
1 b, c
-55 to 150
260
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient b, d
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
SYMBOL
RthJA
RthJF
TYPICAL
60
34
MAXIMUM
80
45
UNIT
°C/W
S14-1224-Rev. C, 16-Jun-14
1
Document Number: 67073
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8 3.0
6
Package Limited
4
2.5
2.0
1.5
1.0
2
0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0.0
25
Si1414DH
Vishay Siliconix
50 75 100 125
TF - Foot Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-1224-Rev. C, 16-Jun-14
5
Document Number: 67073
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
(1.702)
Return to Index
Return to Index
0.016
(0.406)
0.026
(0.648)
0.010
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
www.vishay.com
18
Document Number: 72602
Revision: 21-Jan-08
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SI1414DH.PDF ] | |
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