|
|
PDF MTA050P02DFJ6 Data sheet ( Hoja de datos )
| Número de pieza | MTA050P02DFJ6 | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTA050P02DFJ6 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C394DFJ6
Issued Date : 2015.09.03
Revised Date :
Page No. : 1/9
-20V P-Channel Enhancement Mode MOSFET
MTA050P02DFJ6 BVDSS
ID@VGS=-4.5V, TC=25°C
ID@VGS=-4.5V, TA=25°C
RDSON@VGS=-4.5V, ID=-3A
Features
• Low on-resistance
• Excellent thermal and electrical capabilities
• Pb-free lead plating and halogen-free package
RDSON@VGS=-2.5V, ID=-3A
RDSON@VGS=-1.8V, ID=-3A
-20V
-14.2A
-5.2A
33.4mΩ(typ.)
46.4mΩ(typ.)
71.4mΩ(typ.)
Equivalent Circuit
MTA050P02DFJ6
Outline
DFNWB2×2-6L-J
G：Gate S：Source D：Drain
Ordering Information
Device
MTA050P02DFJ6-0-T1-G
Package
DFNWB2×2-6L-J
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTA050P02DFJ6
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C394DFJ6
Issued Date : 2015.09.03
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
1.2
Ciss
1
-ID=1mA
C oss
100
Crss
10
0.1
1 10
-VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
10
1
0.1
0.01
0.001
100
VDS=-10V
Ta=25°C
Pulsed
0.01 0.1
1
-ID, Drain Current(A)
Maximum Safe Operating Area
10
10 RDS(ON)
Limited
100μs
1ms
1
0.1 TA=25°C, Tj=150°C,
VGS=-4.5V, RθJA=60°C/W
Single Pulse
0.01
0.01
0.1 1
10
-VDS, Drain-Source Voltage(V)
10ms
DC
100
0.8
0.6 -ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Maximum Drain Current vs Junction Temperature
6
5
4
3
2
1 TA=25°C, VGS=-4.5V, RθJA=60°C/W
Single Pulse
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
Gate Charge Characteristics
10
8
6
4
2 VDS=-10V
ID=-3A
0
0 5 10 15 20 25 30
Qg, Total Gate Charge(nC)
MTA050P02DFJ6
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTA050P02DFJ6.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTA050P02DFJ6 | P-Channel Enhancement Mode MOSFET | Cystech Electonics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |