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PDF SQ4850EY Data sheet ( Hoja de datos )
| Número de pieza | SQ4850EY | |
| Descripción | Automotive N-Channel MOSFET | |
| Fabricantes | Vishay | |
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SQ4850EY
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A)
Configuration
Package
60
0.022
0.031
12
Single
SO-8
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
SO-8 Single
D
D5
D6
D7
8
D
G
4
3G
2S
1S
S
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
60
± 20
12
6.9
6.2
48
23
26
6.8
2.2
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
PCB Mount b
SYMBOL
RthJA
RthJF
LIMIT
85
22
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-1878-Rev. F, 17-Aug-15
1
Document Number: 68878
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
100
Limited by RDS(on)*
10
IDM Limited
100 μs
1 ms
1 10 ms
100 ms
1s
0.1 10 s, DC
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
SQ4850EY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
10-3
Notes:
PDM
Single Pulse
10-2
10-1
1
Square Wave Pulse Duration (s)
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-1878-Rev. F, 17-Aug-15
5
Document Number: 68878
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
Return to Index
Return to Index
0.022
(0.559)
0.050
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
www.vishay.com
22
Document Number: 72606
Revision: 21-Jan-08
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SQ4850EY.PDF ] | |
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