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PDF PMN42XPEA Data sheet ( Hoja de datos )
| Número de pieza | PMN42XPEA | |
| Descripción | P-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PMN42XPEA
20 V, P-channel Trench MOSFET
21 March 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Fast switching
• Trench MOSFET technology
• 2 kV ESD protection
• AEC-Q101 qualified
3. Applications
• Relay driver
• High-speed line driver
• High-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; ID = -3 A; Tj = 25 °C
Min Typ Max Unit
- - -20 V
-12 -
12 V
[1] - - -5.7 A
- 41 46 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
PMN42XPEA
20 V, P-channel Trench MOSFET
103
Zth(j-a)
(K/W) duty cycle = 1
0.75
102
0.33
0.2
0.5
0.25
0.1
0.05
10
0.02
0.01
0
aaa-004359
1
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-004360
Zth(j-a)
(K/W)
102 duty cycle = 1
0.75
0.5
0.33
0.2
10
0.25
0.1
0.05
0.02
0 0.01
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMN42XPEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 15
5 Page 
NXP Semiconductors
13. Soldering
3.45
1.95
0.95
3.3 2.825
0.95
0.45 0.55
(6×) (6×)
0.7
(6×)
0.8
(6×)
2.4
Fig. 19. Reflow soldering footprint for TSOP6 (SOT457)
5.3
1.475
5.05
1.475
1.5
(4×)
0.45
(2×)
1.45
(6×)
2.85
Fig. 20. Wave soldering footprint for TSOP6 (SOT457)
PMN42XPEA
20 V, P-channel Trench MOSFET
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot457_fr
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot457_fw
PMN42XPEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 15
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet PMN42XPEA.PDF ] | |
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