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PDF BUY25CS45B-01 Data sheet ( Hoja de datos )
| Número de pieza | BUY25CS45B-01 | |
| Descripción | HiRel RadHard Power-MOS | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Data Sheet BUY25CS45B-01
HiRel RadHard Power-MOS
Low RDS(on)
Single Event Effect (SEE) hardened
LET 85, Range: 118µm LET 55, Range: 90µm
VGS = -10V, VDS = 250V
VGS = -15V, VDS = 250V
VGS = -15V, VDS = 120V
VGS = -20V, VDS = 160V
Total Ionisation Dose (TID) hardened
100 kRad approved
Hermetically sealed
N-channel
1
2
3
4
Type
BUY25CS45B-01
Marking
-
Pin Configuration
123
D SG
Package
4
Not connected TO-254AA
Maximum Ratings
Parameter
Drain Source Voltage
Gate Source Voltage
Drain Gate Voltage
Continuous Drain Current
TC = 25 °C
TC = 100 °C
Continuous Source Current
Drain Current Pulsed, tp limited by Tjmax
Total Power Dissipation 1)
Junction Temperature
Operating and Storage Temperature
Avalanche Energy
Symbol
VDS
VGS
VDG
ID
IS
IDM
Ptot
TJ
Top
EAS
Values
250
+/- 20
250
45
29
45
180
208
-55 to + 150
-55 to + 150
380
Unit
V
V
V
A
A
Apk
W
°C
°C
mJ
Thermal Characteristics
Thermal Resistance (Junction to Case)
Soldering Temperature
Notes.:
1) For TS ≤ 25°C. For TS > 25°C derating is required.
Rth JC
Tsol
0.6
250
K/W
°C
IFAG PMM RFS D HIR
1 of 8
Preliminary Mar 2015
1 page  
Data Sheet BUY25CS45B-01
3 Typ. output characteristics
4 Typ. output characteristics
ID = f(VDS); Tj = 25 °C
parameter: VGS
ID = f(VDS); Tj = 150 °C
parameter: VG
5 Typ. drain-source on-state
resistance
RDS(on) = f(ID); Tj = 150 °C
parameter: VGS
6 Typ. drain-source on-state
resistance
RDS(on) = f(Tj)
ID=29A
IFAG PMM RFS D HIR
5 of 8
Preliminary Mar 2015
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUY25CS45B-01.PDF ] | |
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