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PDF 1SS322 Data sheet ( Hoja de datos )
| Número de pieza | 1SS322 | |
| Descripción | DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1SS322 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS322
Low Voltage High Speed Switching
z Low forward voltage
z Low reverse current
z Small package
: VF (3) = 0.54V (typ.)
: IR = 5μA (max)
: SC−70
1SS322
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Power dissipation
VRM
VR
IFM
IO
P
45 V
40 V
300 mA
100 mA
100 mW
Junction temperature
Tj 125 °C JEDEC
―
Storage temperature
Tstg −55∼125 °C JEITA
SC−70
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
1−2P1D
Weight: 0.006g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 40V
― VR = 0, f = 1MHz
Min Typ. Max Unit
― 0.28 ―
― 0.36 ―
V
― 0.54 0.60
― ― 5 μA
― 18 25 pF
Marking
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1SS322.PDF ] | |
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