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Número de pieza | SPA20N60CFD | |
Descripción | Power Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SPA20N60CFD (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! SPA20N60CFD
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
Product Summary
VDS
RDS(on),max
ID1)
600 V
0.22 W
20.7 A
• Ultra low gate charge
• Extreme dv /dt rated
PG-TO220-3-31
• High peak current capability
• Periodic avalanche rated
• Qualified for industrial grade applications according to JEDEC0)
• Pb-free lead plating; RoHS compliant
Type
SPA20N60CFD
Package
Ordering Code Marking
PG-TO220-3-31 SP000216361 20N60CFD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1)
Pulsed drain current2)
ID
I D,pulse
T C=25 °C
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
E AS I D=10 A, V DD=50 V
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
E AR
I AR
Drain source voltage slope
dv /dt
I D=20 A, V DD=50 V
I D=20.7 A,
V DS=480 V,
T j=125 °C
Reverse diode dv /dt
dv /dt
Maximum diode commutation speed di /dt
Gate source voltage
V GS
I S=20.7 A,
V DS=480 V,
T j=125 °C
static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Value
20.7
13.1
52
690
1
20
80
40
900
±20
±30
35
-55 ... +150
Unit
A
mJ
A
V/ns
V/ns
A/µs
V
W
°C
Rev. 1.4
page 1
2012-02-19
1 page 1 Power dissipation
P TOT=f(T C)
40
30
20
10
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
limited by on-state
relismisitaendcbey on-state
resistance
101
100
SPA20N60CFD
1 µs
10 µs
100 µs
1 ms
10 ms
DC
0
0 40 80 120
TC [°C]
3 Max. transient thermal impedance
Z thJC =f(tP)
parameter: D=t p/T
101
10-1
160 100
101 102
VDS [V]
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
60
103
10 V
0.5
100
10-1
0.2
0.1
0.05
0.02
0.01
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp [s]
50
40
30
20
10
0
0
8V
7.5 V
7V
6.5 V
6V
5.5 V
5V
5 10 15 20 25
VDS [V]
Rev. 1.4
page 5
2012-02-19
5 Page PG-TO220-3-31: Outline
SPA20N60CFD
Dimensions in mm
Rev. 1.4
page 11
2012-02-19
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet SPA20N60CFD.PDF ] |
Número de pieza | Descripción | Fabricantes |
SPA20N60CFD | Power Transistor | Infineon Technologies |
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