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PDF STB42N60M2-EP Data sheet ( Hoja de datos )
| Número de pieza | STB42N60M2-EP | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
N-channel 600 V, 0.076 Ω typ., 34 A MDmesh™ M2 EP
Power MOSFETs in D²PAK, TO-220 and TO-247 packages
Datasheet - production data
TAB
D²PAK
2
3
1
TAB
TAB
TO-220
1 23
TO-247
23
1
Features
Order code
VDS @ TJmax RDS(on) max. ID
STB42N60M2-EP
STP42N60M2-EP
650 V
0.087 Ω 34 A
STW42N60M2-EP
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
Figure 1: Internal schematic diagram
D(2, TAB)
Applications
• Switching applications
• Tailored for very high frequency converters
(f > 150 kHz)
G(1)
S(3)
Order code
STB42N60M2-EP
STP42N60M2-EP
STW42N60M2-EP
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to their strip
layout and improved vertical structure, the
devices exhibit low on-resistance and optimized
switching characteristics with very low turn-off
switching losses, rendering them suitable for the
most demanding very high frequency converters.
AM01476v1
Table 1: Device summary
Marking
Package
Packaging
42N60M2EP
D²PAK
TO-220
TO-247
Tape and reel
Tube
January 2015
DocID027327 Rev 1
This is information on a product in full production.
1/20
www.st.com
1 page  
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off-delay time
tf Fall time
Electrical characteristics
Table 8: Switching times
Test conditions
VDD = 300 V, ID = 17 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17: "Switching
times test circuit for
resistive load" and Figure
22: "Switching time
waveform" )
Min.
-
-
-
Typ. Max. Unit
16.5 -
ns
9.5 - ns
96.5 -
ns
- 8 - ns
Symbol
Parameter
Table 9: Source drain diode
Test conditions
ISD
ISDM(1)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 34 A
ISD = 34 A,
di/dt = 100 A/µs,
VDD = 60 V (see Figure 22:
"Switching time waveform")
ISD = 34 A,
di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 22: "Switching
time waveform")
Min.
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
34 A
136 A
1.6
438
9
41.5
538
12
V
ns
µC
A
ns
µC
44.5 A
Notes:
(1)Pulse width is limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID027327 Rev 1
5/20
5 Page 
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Package mechanical data
Table 10: D²PAK (TO-263) mechanical data
Dim.
Min.
mm
Typ.
Max.
A 4.40
4.60
A1 0.03
0.23
b 0.70
0.93
b2 1.14
1.70
c 0.45
0.60
c2 1.23
1.36
D 8.95
9.35
D1 7.50 7.75
8.00
D2 1.10 1.30
1.50
E 10
10.40
E1 8.50 8.70
8.90
E2 6.85 7.05
7.25
e 2.54
e1 4.88
5.28
H 15
15.85
J1 2.49
2.69
L 2.29
2.79
L1 1.27
1.40
L2 1.30
1.75
R 0.4
V2 0°
8°
DocID027327 Rev 1
11/20
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet STB42N60M2-EP.PDF ] | |
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