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Número de pieza | AUIRGSL4062D1 | |
Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AUIRGSL4062D1 (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
No Preview Available ! AUIRGB4062D1
AUIRGS4062D1
AUTOMOTIVE GRADE
AUIRGSL4062D1
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C VCES = 600V
Features
• Low VCE (on) Trench IGBT Technology
• Low Switching Losses
• 5μs SCSOA
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE (on) Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free, RoHS Compliant
• Automotive Qualified *
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
Applications
• Air Conditioning Compressor
Ordering Information
IC(Nominal) = 24A
G
E
n-channel
tSC ≥ 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.57V
CC
C
E
GC
TO-220AB
AUIRGB4062D1
G
Gate
E
G
D2Pak
AUIRGS4062D1
E
GC
TO-262
AUIRGSL4062D1
C
Collector
E
Emitter
Base part number
AUIRGB4062D1
AUIRGSL4062D1
AUIRGS4062D1
Package Type
TO-220
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
50
50
800
800
Complete Part Number
AUIRGB4062D1
AUIRGSL4062D1
AUIRGS4062D1
AUIRGS4062D1TRL
AUIRGS4062D1TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and
still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600 V
IC @ TC = 25°C
Continuous Collector Current
59
IC @ TC = 100°C
Continuous Collector Current
39
INOM INAL
ICM
ILM
Nominal Current
Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
24
72
96 A
IF @ TC = 25°C
Diode Continous Forward Current
59
IF @ TC = 100°C
IFM
Diode Continous Forward Current
dDiode Maximum Forward Current
39
96
VGE Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
±20 V
±30
PD @ TC = 25°C
PD @ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
246
W
123
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec. (1.6mm from case)
-55 to +175
300
°C
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
10 lbf·in (1.1N·m)
RθJC (IGBT)
RθJC (Diode)
Parameter
eThermal Resistance Junction-to-Case (IGBT)
eThermal Resistance Junction-to-Case (Diode)
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
RθJA Thermal Resistance, Junction-to-Ambient
*Qualification standards can be found at http://www.irf.com/
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.50
62
Max.
0.61
1.2
–––
–––
Units
°C/W
1 www.irf.com © 2013 International Rectifier
May 02, 2013
1 page AUIRGB/S/SL4062D1
2500
2000
1500
1000
500
EON
EOFF
1000
tdOFF
100
tF
tR
10 tdON
0
0 10 20 30 40 50
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 210μH; VCE = 400V, RG = 10Ω; VGE = 15V
2000
1600
1200
800
EON
EOFF
400
1
0 10 20 30 40 50
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 210μH; VCE = 400V, RG = 10Ω; VGE = 15V
1000
tdOFF
100 tF
tR
10 tdON
0
0 20 40 60 80 100 120
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210μH; VCE = 400V, ICE = 24A; VGE = 15V
35
1
0 20 40 60 80 100
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 210μH; VCE = 400V, ICE = 24A; VGE = 15V
35
30 RG = 10Ω
25
RG = 22Ω
20
RG = 47Ω
15
RG = 100Ω
10
30
25
20
15
5
10 15 20 25 30 35 40 45
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
50
10
0
20 40 60 80
RG (Ω)
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
100
5 www.irf.com © 2013 International Rectifier
May 02, 2013
5 Page D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
AUIRGB/S/SL4062D1
D2Pak (TO-263AB) Part Marking Information
Part Number
IR Logo
AUGS4062D1
YWWA
XX or XX
Lot Code
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2013 International Rectifier
May 02, 2013
11 Page |
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AUIRGSL4062D1 | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
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