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PDF ESD7361XV2T1G Data sheet ( Hoja de datos )
| Número de pieza | ESD7361XV2T1G | |
| Descripción | ESD Protection Diodes | |
| Fabricantes | ON Semiconductor | |
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ESD7361, SZESD7361
ESD Protection Diodes
Low Capacitance ESD Protection Diode
for High Speed Data Line
The ESD7361 Series ESD protection diodes are designed to protect
high speed data lines from ESD. Ultra−low capacitance make this
device an ideal solution for protecting voltage sensitive high speed
data lines.
Features
• Low Capacitance (0.55 pF Max, I/O to GND)
• Protection for the Following IEC Standards:
♦ IEC61000−4−2 (ESD): Level 4 ±15 kV Contact
♦ IEC61000−4−4 (EFT): 40 A −5/50 ns
♦ IEC61000−4−5 (Lightning): 1 A (8/20 ms)
• ISO 10605 (ESD) 330 pF/2 kW ±15 kV Contact
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Wireless Charger
• Near Field Communications
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Operating Junction Temperature Range TJ −55 to +125 °C
Storage Temperature Range
Tstg − 55 to +150 °C
Lead Solder Temperature −
Maximum (10 Seconds)
TL 260 °C
IEC 61000−4−2 Contact (ESD)
IEC 61000−4−2 Air (ESD)
ISO 10605 330 pF/2 kW Contact (ESD)
ESD
ESD
ESD
±15 kV
±15 kV
±15 kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
MARKING
DIAGRAMS
2
1
SOD−323
CASE 477
2
1
SOD−523
CASE 502
7H
M
7H
12
SOD−923
CASE 514AB
2M
X, XX = Specific Device Code
M = Date Code
PIN CONFIGURATION
AND SCHEMATIC
1
Cathode
2
Anode
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
February, 2015 − Rev. 1
1
Publication Order Number:
ESD7361/D
1 page  
ESD7361, SZESD7361
25 −25
20 −20
15 −15
10 −10
5 −5
0
0 5 10 15 20 25 30 35 40
0
0 −2 −4 −6 −8 −10 −12 −14
VC, VOLTAGE (V)
Figure 11. Positive TLP I−V Curve
VC, VOLTAGE (V)
Figure 12. Negative TLP I−V Curve
NOTE: TLP parameter: Z0 = 50 W, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns. VIEC is the equivalent voltage
stress level calculated at the secondary peak of the IEC 61000−4−2 waveform at t = 30 ns with 2 A/kV. See TLP description
below for more information.
Transmission Line Pulse (TLP) Measurement
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 13. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 14 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels.
L
50 W Coax
Cable
S Attenuator
÷
50 W Coax
Cable
10 MW
IM VM
VC DUT
Oscilloscope
Figure 13. Simplified Schematic of a Typical TLP
System
Figure 14. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
www.onsemi.com
5
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