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PDF NTMFS4C35N Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4C35N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMFS4C35N
Power MOSFET
30 V, 80 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 80°C
VDSS
VGS
ID
30
±20
22.5
16.8
Unit
V
V
A
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJA ≤ 10 s
TA = 25°C
TA = 25°C
TA = 80°C
PD
ID
2.59 W
36 A
27
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 80°C
PD
ID
6.65 W
12.4 A
9.3
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC =80°C
PD
ID
0.78 W
80 A
60
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
TA = 25°C, tp = 10 ms
PD
IDM
33 W
180 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL = 48 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IDmax
TJ,
TSTG
IS
dV/dt
EAS
TL
80
−55 to
+150
30
7.0
115
A
°C
A
V/ns
mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 29 A, EAS = 42 mJ.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
3.2 mW @ 10 V
4.0 mW @ 4.5 V
D (5−8)
ID MAX
80 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
SD
S 4C35N
S AYWZZ
GD
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
ORDERING INFORMATION
Device
NTMFS4C35NT1G
Package
SO−8 FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
NTMFS4C35NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
February, 2014 − Rev. 1
1
Publication Order Number:
NTMFS4C35N/D
1 page  
NTMFS4C35N
TYPICAL CHARACTERISTICS
1000
100
Single Pulse Response
0 V < VGS < 10 V
TA = 25°C
10
1
10 ms
100 ms
1 ms
10 ms
0.1
0.01
0.01
RDS(on) Limit
Thermal Limit
Package Limit
dc
0.1 1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
140
45
40
35 ID = 29 A
30
25
20
15
10
5
0
25 50
75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Stating Junction Temperature
100
120
100
80
10
60 VDS = 1.5 V
40
20
0
0 25 50 75 100 125 150
ID (A)
Figure 13. GFS vs. ID
1
1.E−08 1.E−07 1.E−06
1.E−05 1.E−04 1.E−03
PULSE WIDTH (sec)
Figure 14. Avalanche Characteristics
100
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 15. Thermal Response
1
10 100 1000
http://onsemi.com
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| PDF Descargar | [ Datasheet NTMFS4C35N.PDF ] | |
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