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PDF IXTL2N450 Data sheet ( Hoja de datos )
| Número de pieza | IXTL2N450 | |
| Descripción | High Voltage Power MOSFET | |
| Fabricantes | IXYS | |
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High Voltage
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
IXTL2N450
VDSS
ID25
RDS(on)
= 4500V
= 2A
20
ISOPLUS i5-PakTM
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
PD
TJ
TJM
Tstg
TL
TSOLD
FC
VISOL
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
Maximum Ratings
4500
4500
20
30
V
V
V
V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
2
8
220
- 55 ... +150
150
- 55 ... +150
A
A
W
C
C
C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300 °C
260 °C
Mounting Force
20..120 / 4.5..27
N/lb.
50/60Hz, 1 Minute
4000
V~
8g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
VGS(th)
VDS = VGS, ID = 250A
IGSS VGS = 20V, VDS = 0V
IDSS VDS = 3.6kV, VGS = 0V
VDS = 4.5kV
VDS = 3.6kV
Note 2, TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
3.5 6.0 V
200 nA
10 A
50 μA
250 μA
20
G
S
D
G = Gate
D = Drain
Isolated Tab
S = Source
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V~ RMS Electrical Isolation
Molding Epoxies meet UL 94 V-0
Flammability Classification
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
High Voltage Power Supplies
Capacitor Discharge Applications
Pulse Circuits
Laser and X-Ray Generation Systems
© 2013 IXYS CORPORATION, All Rights Reserved
DS100458B(9/13)
1 page  
IXTL2N450
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
0.01
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10 100
© 2013 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_2N450(H9-P640) 9-24-13
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTL2N450.PDF ] | |
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