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PDF IXTA90N075T2 Data sheet ( Hoja de datos )
| Número de pieza | IXTA90N075T2 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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TrenchT2TM
Power MOSFET
IXTA90N075T2
IXTP90N075T2
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrnsic Rectifier
Symbol
VDSS
VDGR
VGSM
ID25
IL(RMS)
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
Tsold
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-220)
TO-263
TO-220
Maximum Ratings
75
75
V
V
± 20 V
90 A
75 A
225 A
50 A
400 mJ
180 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
1.13 / 10
°C
°C
Nm/lb.in.
2.5 g
3.0 g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
IGSS
VDS = VGS, ID = 250μA
VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
Characteristic Values
Min. Typ. Max.
75 V
2.0 4.0 V
±200 nA
2 μA
250 μA
10 mΩ
VDSS =
ID25 =
RDS(on) ≤
75V
90A
10mΩ
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
International Standard Packages
175°C Operating Temperature
High Current Handling Capability
Fast Intrinsic Rectifier
Avalanche Rated
ROHS Compliant
High Performance Trench
Technology for Extremely Low RDS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Synchronous
Applications
DC-DC Converters
Battery Chargers
Synchronous Buck Converter
(for Notebook System-Power &
General Purpose Point & Load)
AC Motor Drives
High Current Switching Applications
Power Train Management
Distributed Power Architecture
© 2009 IXYS CORPORATION, All Rights Reserved
DS99949B(11/09)
1 page  
32
30
28
26
24
22
20
18
16
25
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
RG = 5Ω , VGS = 10V
VDS = 37V
I D = 25A
I D = 50A
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
70
t r td(on) - - - -
60 TJ = 125ºC, VGS = 10V
VDS = 37V
50
I D = 50A, 25A
40
I D = 50A, 25A
30
34
30
26
22
18
20 14
10 10
4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
25
55
24 t f
td(off) - - - -
23
RG = 5Ω, VGS = 10V
VDS = 37V
22
50
45
40
21
20
TJ = 125ºC
19
TJ = 25ºC
35
30
25
18 20
17 15
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
IXTA90N075T2
IXTP90N075T2
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
30
28 TJ = 25ºC
26
RG = 5Ω , VGS = 10V
24 VDS = 37V
22
20 TJ = 125ºC
18
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
23 45
t f td(off) - - - -
22 RG = 5Ω, VGS = 10V
VDS = 37V
21
20
I D = 25A
40
35
30
19
I D = 50A
25
18 20
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
65
60 t f
td(off) - - - -
55 TJ = 125ºC, VGS = 10V
50 VDS = 37V
I D = 50A
45
40
35
30
I D = 25A
25
20
15
4 6 8 10 12 14 16 18
RG - Ohms
100
90
80
70
60
50
40
30
20
10
0
20
© 2009 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXTA90N075T2.PDF ] | |
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