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Número de pieza | ME9926 | |
Descripción | Dual N-Channel 2.5-V (G-S) MOSFET | |
Fabricantes | Matsuki | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ME9926 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Dual N-Channel 2.5-V (G-S) MOSFET
GENERAL DESCRIPTION
The ME9926 is the Dual N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching and low in-line power loss are needed in a
very small outline surface mount package.
ME9926
FEATURES
● RDS(ON)≦29mΩ@VGS=4.5V
● RDS(ON)≦42mΩ@VGS=2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Load Switch
● DSC
PIN CONFIGURATION
(SOP-8)
Top View
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
TA=25℃
TA=70℃
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
RθJC
Steady State
20
±12
6
28
2.0
1.2
-55 to 150
T≦10 sec
62.5
Steady State
88
50
e * The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
℃
℃/W
℃/W
July, 2008-Ver1.1
01
1 page Dual N-Channel 2.5-V (G-S) MOSFET
SOP-8 Package Outline
ME9926
MILLIMETERS (mm)
DIM
MIN MAX
A 1.35 1.75
A1 0.10
0.25
B 0.35 0.49
C 0.18 0.25
D 4.80 5.00
E 3.80 4.00
e 1.27 BSC
H 5.80 6.20
L 0.40 1.25
θ 0°
7°
Note: 1. Refer to JEDEC MS-012AA.
2. Dimension “D” does not include mold flash, protrusions
or gate burrs . Mold flash, protrusions or gate burrs shall not
exceed 0.15 mm per side.
July, 2008-Ver1.1
05
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet ME9926.PDF ] |
Número de pieza | Descripción | Fabricantes |
ME9926 | Dual N-Channel 2.5-V (G-S) MOSFET | Matsuki |
ME9926 | Dual N-Channel High Density Trench MOSFET | Aonetek Semiconductor |
ME9926-G | Dual N-Channel 20V (D-S) MOSFET | Matsuki |
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