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PDF CM2302 Data sheet ( Hoja de datos )

Número de pieza CM2302
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes CHIMICRON SEMICONDUCTOR 
Logotipo CHIMICRON SEMICONDUCTOR Logotipo



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CM2302
N-Channel Enhancement Mode Power MOSFET
20VDS/ ±10VGS/2.9A(ID)
Description
The NCE2302 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
Application
Battery protection
Load switch
Power management
Part No
CM2302
Product Summary
VDS= 20V,ID= 2.9A
RDS(ON)< 59m@ VGS=2.5V
RDS(ON)< 45m@ VGS=4.5V
D
S
G
SOT-23 Package
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Current Drain
ID
Pulsed Drain Current
Power Description
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)b
IDM
PD
TjTSTG
RθJA
Maximum
20
±10
2.9
10
1
-55°C to 150°
125
Units
V
V
A
A
W
/w
TAIWAN CHIMICRON SEMICONDUCTOR CO., LTD
Rev. 1. 3 Dec. 2012
www.chimicron.com [email protected]
Page 1 of 5

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CM2302 pdf
CM2302
N-Channel Enhancement Mode Power MOSFET
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
TAIWAN CHIMICRON SEMICONDUCTOR CO., LTD
Rev. 1. 3 Dec. 2012
www.chimicron.com [email protected]
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