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PDF PHE13003A Data sheet ( Hoja de datos )
| Número de pieza | PHE13003A | |
| Descripción | NPN power transistor | |
| Fabricantes | NXP Semiconductors | |
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PHE13003A
NPN power transistor
Rev. 02 — 29 July 2010
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor in a SOT54
(TO-92) 3 leads plastic package.
1.2 Features and benefits
Fast switching
High voltage capability of 700 V
1.3 Applications
Compact fluorescent lamps (CFL)
Electronic lighting ballasts
Inverters
Off-line self-oscillating power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
IC
collector current
DC; see Figure 2
Ptot total power
dissipation
Tlead ≤ 25 °C; see Figure 1
VCESM
collector-emitter peak VBE = 0 V
voltage
Static characteristics
hFE
DC current gain
IC = 0.8 A; VCE = 5 V;
Tlead = 25 °C; see Figure 8;
see Figure 9
Min Typ Max Unit
- - 1A
- - 2.1 W
- - 700 V
5 7.5 20
1 page  
NXP Semiconductors
PHE13003A
NPN power transistor
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
ICES collector-emitter cut-off VBE = 0 V; VCE = 700 V; Tj = 125 °C
current
IEBO
emitter-base cut-off
VEB = 9 V; IC = 0 A; Tlead = 25 °C
current
VCEOsus
VCEsat
collector-emitter sustaining IB = 0 A; IC = 1 mA; LC = 25 mH;
voltage
Tlead = 25 °C; see Figure 4; see Figure 5
collector-emitter saturation IC = 0.25 A; IB = 50 mA; Tlead = 25 °C;
voltage
see Figure 6
IC = 0.5 A; IB = 125 mA; Tlead = 25 °C;
see Figure 6
IC = 0.75 A; IB = 250 mA; Tlead = 25 °C;
see Figure 6
VBEsat
base-emitter saturation
voltage
IC = 0.25 A; IB = 50 mA; Tlead = 25 °C;
see Figure 7
IC = 0.5 A; IB = 125 mA; Tlead = 25 °C;
see Figure 7
hFE
DC current gain
IC = 0.5 mA; VCE = 2 V; Tlead = 25 °C;
see Figure 8; see Figure 9
IC = 0.4 A; VCE = 5 V; Tlead = 25 °C;
see Figure 8; see Figure 9
IC = 0.8 A; VCE = 5 V; Tlead = 25 °C;
see Figure 8; see Figure 9
Dynamic characteristics
tf fall time
IC = 1 A; IBon = 200 mA; VBB = -5 V;
LB = 1 µH; Tlead = 25 °C; inductive load;
see Figure 10; see Figure 11
Min Typ Max Unit
- - 5 mA
- - 1 mA
400 - - V
- 0.2 0.5 V
-
0.3 1
V
- 0.4 1.5 V
- - 1V
- - 1.2 V
12 -
-
10 -
30
5 7.5 20
- 80 - ns
6V
30 Hz to 60 Hz
300 Ω
50 V
100 Ω to 200 Ω
horizontal
oscilloscope
vertical
1Ω
001aab987
Fig 4. Test circuit for collector-emitter sustaining
voltage
IC
(mA)
250
100
10
0
min VCE (V)
VCEOsus
001aab988
Fig 5. Oscilloscope display for collector-emitter
sustaining voltage test waveform
PHE13003A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 29 July 2010
© NXP B.V. 2010. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
PHE13003A
NPN power transistor
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PHE13003A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 29 July 2010
© NXP B.V. 2010. All rights reserved.
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